Disrupting the DRAM roadmap with capacitor-less IGZO-DRAM technology

Summary

Traditional DRAM technology, with memory bit cells consisting of one silicon transistor and one capacitor, faces major scaling challenges.A new DRAM bit cell without a capacitor and with two thin-film transistors – each having an oxide semiconductor channel such as indium-gallium-zinc-oxide (IGZO) – shows promises for continuing the DRAM technology roadmap, clearing the way for high-density 3D DRAM and embedded DRAM.